Conventional Von-Neumann-based systems, featuring distinct memory and compute units, struggle to cope with the high volume of data traffic between these elements. The problem is twofold. The finite data bus tethering the memory and computing units creates a choke point. Second, conventional systems often consume more energy in shuttling data between components than in actual computation. Near-memory and In-memory computing architectures aim to mitigate this energy overhead by bringing the memory closer to the computing unit or integrating memory and compute functions into a unified entity. The critical prerequisite for this approach is the availability of stable, non-volatile memory operating at speeds compatible with the computing unit. Emerging non-volatile memory technologies, including Phase Change Random Access Memory (PCRAM), Resistive Random Access Memory (RRAM), Magnetic Random Access Memory (MRAM), and Ferroelectric Random Access Memory (FeRAM), inherently possess these capabilities.

In the initial segment of the presentation, we delve into phase change materials (PCMs), elucidating their operational principles and their applicability in serving as both selectors and memory components within a vertically stackable cross-point memory architecture. Following this, we explore the binary GexTe100-x system and its significance in establishing a connection between the material properties and the metrics of PCRAM through the analysis of device IV characteristics. Next, we discuss an enhanced iteration of the custom programmable electrical test setup designed to effectively capture the temporal evolution of current in response to ns voltage excitations. Subsequently, the process steps involved in fabricating the devices and analysis of the obtained transient IV measurements of the as-deposited amorphous GeTe devices will be discussed. Furthermore, upon exciting the pristine devices, we notably observe a correlation between the slope of subthreshold currents and the amplitude of input voltages. The impact of the applied voltage's magnitude on the behaviour of sub-threshold current is essential in determining the stable operational ranges of PCM-based selectors and memory elements.