Atomically thin 2D layered films have attracted significant attention due to excellent electrical and optical properties. The development of electronic devices for practical applications demands for the production of such layered films in large area which is still an obstacle. In this work, we aim to develop a facile method to directly grow large area Transition Metal Dichalcogenides (TMDCs, e.g. MoS2) thin films on SiO2/Si substrate and other substrates via atmospheric pressure chemical vapor deposition method (APCVD). Further we aim to investigate the vertical transport in these atomically thin layers by integrating them in metal-TMD-metal structure. Such structures can not only give a wealth of information about the defect density in these materials but are of practical applications too. These can be used as a non-volatile memories in the form of memristors. Such memories are supposed to have ultra-low power consumption, ultra fast and highly scalable.


In this presentation, growth mechanism of TMDCs including shape and size evolution, nature of defects and their origin will be discussed. Various physical characterizations such as optical microscopic observation, RAMAN and Photo luminescence will be discussed and results will be interpreted. In terms of electrical characterizations, I will discuss the resistance switching mechanism in memristors and its interfacial properties between the metal and MoS2 junction. Finally a future plan to grow these materials and detailed electrical/physical characterizations will be discussed.