Advancement in III-N device technology have mainly taken place due to material innovations that paved the way for the development of new generation of devices based on confinement of carrier in quantum well with superior transport properties. Consequently III-N material based devices with improved performance are being developed worldwide for high frequency, high power, and broadband civil/military systems. The main technology breakthrough have taken place in HEMT device design, epi-layer structure, improved S/D contacts, reduced gate length (~0.25µm) with gate engineering, innovative field plate design and low parasitic interconnection techniques.

The talk will mainly cover all the important aspects of device technology right from HEMT material structure, device design to unit process step development on front side/backside of wafer, characterization and their integration that has resulted in device development with cut-off frequencies > 40GHz and RF power density~5W/mm@10GHz suitable for X/Ku band power amplifier, low noise amplifier and switch MMIC applications.