Spin selective transport made chiral materials and molecules very promising candidates for spintronic applications. By controlling the relative spin orientation and manipulating the spin directions, one can guide chemical transformations. We have demonstrated many experiments through the chiral induced spin selectivity (CISS) effect; efficient electron transport through chiral molecules and materials depends on the helicity and the electron spin orientation. Here we explained the temperature dependent CISS effect by experiment and theoretical model, which includes the vibrational contribution to the spin orbit coupling. Temperature dependent studies provide an insight that; phonon may contribute to the spin polarization in the magnetoresistance devices.

We also developed and scrutinized a spin transistor using chiral crystals based on CISS effect, which features a memristor type behaviour, which depends on trapping both charges and spins. The spin properties have monitored by Hall signal and by an external magnetic field. The spin transistor exhibits nonlinear source-drain currents, with multilevel controlled states generated by the magnetization of the source. Varying the source magnetization enables a six-level readout for the two-terminal device.