Diamond is one of the fascinating wide-bandgap (WBG) materials (Eg =5.47 eV) because of its exceptional physical properties and chemical inertness like high hardness (100 GPa) and high thermal conductivity (2000 Wm−1K−1) [1]. With boron doping, diamond can easily be transformed into semiconductor, metal and superconductor as well. The discovery of superconductivity in boron-doped diamond (BDD) has paved the way to make it an attractive material for research [2]. Boron in the diamond lattice creates an acceptor level at 0.36 eV above the valence band maximum. The effect of grain sizes and grain boundaries plays an important role in the superconducting properties of BDD. There is a need for material with higher granularity for efficient performance and reduction in chip sizes. Granularity in the diamond films can be controlled by tuning the growth parameters like CH2/H2 ratio and chamber pressure [3]. CVD diamond films can be broadly classified into micro-crystalline diamond (MCD) [> 500 nm], nano-crystalline diamond (NCD) [10 –100 nm] and ultra-nano-crystalline diamond (UNCD) [