Pressure sensors are widely used in industries for monitoring their operations. Silicon carbide is a potential wide bandgap material that can be employed for pressure sensing at high temperatures. Fabrication of good quality SiC thin films without contaminants and with good stoichiometry is necessary to fabricate good quality devices. Pulsed laser deposition is an emerging technique with which we can grow good quality SiC films. In this work, SiC films will be grown through the PLD technique and subsequent laser-assisted doping will be done to induce different dopants such as Aluminium (Al), Phosphorous (P), and Boron (B) as charge carriers into the intrinsic film. The effect of these dopants on the mechanical and electrical properties of SiC films will be studied, and using the doped regions as piezoresistive sensing elements a pressure sensor will be fabricated interconnecting them in a Wheatstone bridge circuit.