Development of multifunctional electronic devices as a primary goal, extensive research has been undertaken to induce magnetic order in semiconductors by doping suitable elements. Due to its exotic physical properties, 3C-SiC offers an excellent test bed for this purpose. In this work we have tried to enhance the defect (d0) induced magnetism by introducing p-type charge carriers in to the host lattice (3C-SiC). In addition to this if the dopant also carries a magnetic moment it may be an added advantage. Phase pure 3C-SiC and 3C-Si1-xTx C (x = 0.01, 0.03, 0.05; T = Cr, Mn, Co, Ni) samples were synthesized using rice husk and transition metal precursors in a plasma reactor operated for a short time (15mins). The nature of magnetic order, magnetic anisotropy and spin dynamics were investigated using low temperature and high temperature magnetic measurements employing SQUID VSM, Vibrating Sample Magnetometer and Variable temperature Electron Paramagnetic Resonance Spectrometer. The detailed analysis of magnetic and magnetic resonance measurements reveal that 3% Mn doping in 3C-SiC gives the best result to induce long range magnetic order with relatively large spontaneous magnetization and high Curie temperature among the materials investigated.