Optimum performance of the electronic devices requires pristine interfaces between electrodes and underlying materials. Our research highlights the superior interface between semimetals and gate oxide or semiconductor in MOS (Metal-Oxide-Semiconductor) capacitors and MS (Metal-Semiconductor) diodes respectively, as evidenced by high-resolution electron microscopy, capacitance- voltage (CV) and current-voltage (IV) characterizations. Unlike conventional metals, these semimetals avoid inducing defects in underlying ultrathin gate oxide and channel materials. The work function of the semimetals have been evaluated from the CV analysis of the MOS capacitors and corroborated with the density functional theory estimation. The barrier height modulation at n-Ge/semimetal interface has been demonstrated, which signifies the de-pinning of the Fermi level at the n-Ge interface. Furthermore we are exploring the in-plane magneto-transport in the layered semimetals at low temperatures to understand the underlying quantum transport phenomena.


References :
1. Bubunu Biswal, et al. "Work function of van der Waals topological semimetals: Experiment and theory." Applied Physics Letters 120.9 (2022) p.093101

2. Bubunu Biswal, et al. "Layered semimetal electrodes for future heterogeneous electronics." Appl. Phys. Lett 123 (2023): 113102​