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Transition metal oxides as carrier selective transport layers for crystalline silicon heterojunction solar cell application

Transition metal oxides as carrier selective transport layers for crystalline silicon heterojunction solar cell application

Date3rd Aug 2023

Time04:00 PM

Venue HSB-203, Department of Physics

PAST EVENT

Details

Photovoltaic technology (PV) has gone through significant development over the past few decades and has become one of the leading players in today’s global consumption of sustainable energy. Due to the abundance of silicon and the mature fabrication process of crystalline silicon (c-Si) solar cells, it dominates the PV market. Among the c-Si based PV technologies, Silicon heterojunction (SHJ) solar cells have achieved the highest efficiency (26.81%). With the use of thin intrinsic hydrogenated amorphous silicon (a-Si:H(i)) layers for passivation, the SHJ cells have achieved a high Voc in the state-of-the-art device. However, the problems lie in the emitter layer (a-Si:H (p)), which suffers from parasitic absorption loss and the passivation effect degrades upon annealing. This demands low processing temperature (

Speakers

Mr. KANAKALA RAJESH, (PH18D051)

Department of Physics, IIT Madras