The discovery of graphene in the early 2000s led to the development of a new class of material system, now widely known as 2-dimensional (2D) materials. The atomic-scale thickness of 2D materials leads to interesting transport properties beneficial for electronic device applications. 2D- transition metal dichalcogenides (2D-TMDCs) have been widely investigated in logic applications in the last decade. However, out-of-plane transport in 2D-TMDCs has been relatively unexplored. In this work, I propose to investigate resistive switching in 2D-TMDCs for brain- inspired/neuromorphic computing applications. Neuromorphic circuits have two basic building blocks, namely the artificial neurons and the synapses. In this presentation, I will first demonstrate the development of threshold-switching memristive (TSM) devices with exfoliated MoS2. We observe that soft dielectric breakdown in exfoliated MoS2 films is difficult to control and we develop a strategy for controlled defect engineering in exfoliated MoS2. The 2D-TSM devices developed using this approach can be used in artificial spiking neurons for neuromorphic circuits. Despite their interesting electronic properties, large-area synthesis of 2D-TMDCs for practical applications still remains a major challenge. In the next part of the presentation, I will discuss synthesis of large-area MoS2 films using chemical vapor deposition (CVD). We report synthesis of large-area monolayer (1L) MoS2 films (ranging from 1 - 7 mm). I will also discuss resistance switching in crossbar devices with 1L-MoS2 active layer. The large-area MoS2 films offer promise for developing crossbar arrays of memristive devices. Finally, I will present the plan for my future research.