Diamond due to its extreme properties (electrical, thermal, mechanical etc.) has been popular as one of the best next generations of wide-bandgap (WBG) category semiconductor materials thus providing a great opportunity for many applications in advanced power electronics, quantum computing etc. The very fascinating fact that this insulating lattice can be made conducting (n- or p-type) by doping gives us opportunities to play around with its electrical properties. Recently there has been a surge in the research of doped diamonds however the only problem that needs to be addressed is the large carrier activation energy of the available dopants in diamond for its application at room temperature for which a lower activation energy of dopants is a must. Growth of doped diamond (especially n-type) with enhanced conductivity has been a challenge for decades during CVD process.
We have been able to fabricate and achieve high conductivity in diamond by incorporating dopants via ion implantation technique making it n-type. High electrical conductivity ~650