Charge trapping in gate insulator traps is one the major reliability concerns in MOS transistors. One of the reliability issues is RTN, defined as switching of source-drain current in a MOSFET due to random trapping/detrapping of channel carriers into gate insulator traps. For scaled devices, a single gate insulator trap can significantly impact the device performance. Silicon-Germanium (SiGe) is an alternate channel material to Silicon which offers significant performance enhancement for PMOS transistors. The focus of the work is to investigate the impact of RTN in SiGe channel pFETs from 32nm technology node. In this work, we have carried out extensive RTN characterization, followed by a detailed study to understand the behaviour of gate insulator traps. Further, the magnitude of RTN is also studied and its impact on the device performance is quantified as fluctuations in threshold voltage. Finally, a comparison is made between SiGe-channel and Si-channel pFETs which reveals that RTN impact is similar in both cases.