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Analytical Model of Sub-threshold Current and Slope for Asymmetric 4-T and 3-T Double-Gate MOSFETs. IEEE Trans. Electron Devices. 2008:accepted..
Design of Active Inductors in SiGe/SiGe:C Processes for RF Applications. Int. J. RF and Microwave Computer Aided Engineering. 2007:455-468..
Implementation of a scalable VBIC model for SiGe:C HBTs. Solid State Electronics. 2006:399-407..