Publications
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. Role of abrasives in high selectivity STI CMP slurries. Microelectron. Engg. 2008;85:1748-1753.
. {The effect of hydrogen peroxide on polishing removal rate in CMP with various abrasives}. {APPLIED SURFACE SCIENCE}. {255}:{3764-3768}.
. {Mechanism of high selectivity in ceria based shallow trench isolation chemical mechanical polishing slurries}. {THIN SOLID FILMS}. {518}:{5737-5740}.
. {Role of abrasives in high selectivity STI CMP slurries}. {MICROELECTRONIC ENGINEERING}. {85}:{1748-1753}.
