<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">R. Manivannan</style></author><author><style face="normal" font="default" size="100%">S. Ramanathan</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">{Role of abrasives in high selectivity STI CMP slurries}</style></title><secondary-title><style face="normal" font="default" size="100%">{MICROELECTRONIC ENGINEERING}</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">ceria</style></keyword><keyword><style  face="normal" font="default" size="100%">glutamic acid</style></keyword><keyword><style  face="normal" font="default" size="100%">Shallow trench isolation</style></keyword><keyword><style  face="normal" font="default" size="100%">silica}</style></keyword><keyword><style  face="normal" font="default" size="100%">{Chemical mechanical planarization</style></keyword></keywords><dates><pub-dates><date><style  face="normal" font="default" size="100%">{AUG}</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">{8}</style></number><publisher><style face="normal" font="default" size="100%">{ELSEVIER SCIENCE BV}</style></publisher><pub-location><style face="normal" font="default" size="100%">{PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}</style></pub-location><volume><style face="normal" font="default" size="100%">{85}</style></volume><pages><style face="normal" font="default" size="100%">{1748-1753}</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">{In this study chemical mechanical planarization slurries for shallow trench isolation exhibiting high oxide to nitride polish rate selectivity were investigated and it was found that the abrasives play a major role in suppressing the nitride polish rate and enhancing selectivity. When glutamic acid is used as a selectivity enhancing additive, only ceria based slurries exhibit high selectivity while silica based slurries show low selectivity under identical conditions. A mechanism involving active sites on the ceria abrasive and interaction of glutamic acid with the active sites is proposed to explain the role of abrasive in enhancing selectivity. (C) 2008 Elsevier B.V. All rights reserved.}</style></abstract><work-type><style face="normal" font="default" size="100%">{Article}</style></work-type></record></records></xml>