<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Y. Nagendra Prasad</style></author><author><style face="normal" font="default" size="100%">S. Ramanathan</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">{Role of amino-acid adsorption on silica and silicon nitride surfaces during STI CMP}</style></title><secondary-title><style face="normal" font="default" size="100%">{ELECTROCHEMICAL AND SOLID STATE LETTERS}</style></secondary-title></titles><number><style face="normal" font="default" size="100%">{12}</style></number><publisher><style face="normal" font="default" size="100%">{ELECTROCHEMICAL SOC INC}</style></publisher><pub-location><style face="normal" font="default" size="100%">{65 SOUTH MAIN STREET, PENNINGTON, NJ 08534 USA}</style></pub-location><volume><style face="normal" font="default" size="100%">{9}</style></volume><pages><style face="normal" font="default" size="100%">{G337-G339}</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">{Selectivity (oxide/nitride polish rate) is a critical factor during chemical mechanical polishing (CMP) of shallow trench isolation (STI) structure, and it can be modified by adding amino acids to the slurry. The role of adsorption of the amino acids L-proline and L-arginine, on silicon dioxide and silicon nitride surfaces was characterized as a function of pH and concentration using thermogravimetric analysis. The results suggest that the adsorption behavior does not correlate with the polishing behavior of STI CMP and hence it may not play a key role in changing the selectivity. (c) 2006 The Electrochemical Society.}</style></abstract><work-type><style face="normal" font="default" size="100%">{Article}</style></work-type></record></records></xml>