Course Name: EC5133 : VLSI Technology

Description: Crystal structure, crystal growth and epitaxy. Unit processes for- VLSIoxidation, photolithography, diffusion and ion implantation. Deposition of metal and dielectric films by vacuum evaporation, sputtering and CVD techniques, wet and dry etching techniques. Device and Circuit fabrication-Isolation techniques, Self aligned processes. Resistors and Capacitors, MOS based silicon ICS-NMOS and CMOS lCs, .Memory Devices, SOI Devices, BJT based ICs I2L and ECL transistors -BICMOS technology. Lab : Scribing and cleaning of wafers? 4-point probe and hot probe measurement. SUPREM/STEPS Simulation of oxide growth Oxidation and measurement of oxide thickness Photolithography SUPREM/Analytical simulation of phosphorus and boron diffusion. Phosphorus/Boron diffusion? 4-point probe, hot probe and junction depth measurement Back oxide etching and Al evaporation for ohmic contact I-V, C-V of p-n junctions and MOS capacitors.

Slot: B

RoomNo: ESB 242

Instructor: Karmalkar S

Period: JUL-NOV 2013

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