Course Name: EC5132 : Semiconductor Device Modelling

Description: Concentration and motion of carriers in Semiconductor - bulk Equilibrium concentration in intrinsic and extrinsic semiconductors, Excess carriers, Drift and Diffusion transport, continuity equation. Concentration and motion of carriers at the interface-Surface recombination, surface mobility etc. Device ModelingBasic equations for device analysis, approximation to these equations for deriving analytical expressions. PN Homojunction-ideal static I-V characteristics and deviations including breakdown, ac small signal equivalent circuit, switching characteristics. MIS Junction/capacitorideal C-V characteristics and deviations due to interface states/charges and work function differences, threshold voltage. BJT-Transistor action, Static Characteristics, ac small signal equivalent circuit, switching characteristics. FETsField effect, types of transistors (JFET, MESFET, MISFET), Static characteristics of MISFET, small signal equivalent circuit, difference between BJT and FETS.

Slot: A

RoomNo: ESB 242

Instructor: Anjan Chakravorthy

Period: JUL-NOV 2013

This page was created on: Thursday 19th of September 2013 09:57:07 PM