Course Name: EE5260 : Mos Device Modelling

Description: MOS as 2-terminal device : Ideal MIS diode, Deviation from Ideality. Si-SiO2 system: Oxide Charges. GaAs MIS structure and related problems - Interface Trap Properties from the Capacitance and Conductance - Determination of Flatband Voltage, Oxide trapped Charges and Radiation effects - Deep levels and DLTS. MOS as 3 and 4-terminal device: Modern MOSFET. Effect of non-uniform doping, Short and narrow channel -effectsThreshold voltage shift, subthreshold slope, Velocity saturation, and its effect on transconductance, Hot electrons. Problem of Punch through. SOI MOSFETs.

Slot: G

RoomNo: ESB242

Instructor: Amitava Das Gupta

Period: JAN-MAY 2013

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